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| FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features * -2.4 A, -20 V. RDS(ON) = 52 m @ VGS = -4.5 V RDS(ON) = 70 m @ VGS = -2.5 V RDS(ON) = 100 m @ VGS = -1.8 V Applications * Battery management * Load switch * Battery protection * Fast switching speed * High performance trench technology for extremely low RDS(ON) * SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S G S SuperSOT -3 TM G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Parameter Ratings -20 8 (Note 1a) Units V V A W C -2.4 -10 0.5 0.46 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 C/W C/W Package Marking and Ordering Information Device Marking 304 Device FDN304P Reel Size 7'' Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDN304P Rev C(W) Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = -8 V VGS = 0 V VDS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -13 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25C VGS = -4.5 V, VGS = -2.5 V, VGS = -1.8V, VGS = -4.5 V, VDS = -5 V, ID = -2.4 A ID = -2.0 A ID = -1.8 A VDS = -5 V ID = -1.25 A -0.4 -0.8 3 36 47 65 -1.5 V mV/C 52 70 100 m ID(on) gFS -10 12 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 1312 240 106 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 15 15 40 25 27 27 64 40 20 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -2.4 A, 12 2 2 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 (Note 2) -0.42 -0.6 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN304P Rev C(W) FDN304P Typical Characteristics 15 VGS = -4.5V -3.0V -ID, DRAIN CURRENT (A) 12 -2.5V -2.0V 4 3.5 VGS = -1.5V 3 9 -1.8V 6 2.5 2 1.5 -1.8V -2.0V -2.5V -1.5V -3.0V -4.5V 3 1 0.5 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 1.4 1.3 1.2 1.1 1 ID = -2.4A VGS = -4.5V ID = -1.2 A 0.12 0.1 0.08 TA = 125 C 0.06 TA = 25 C 0.04 0.02 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) o o 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 15 VDS = - 5V 12 -55 C 9 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = VGS = 0V 25 C o 10 1 0.1 TA = 125 C 25 C -55 C o o o 6 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 3 0 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN304P Rev C(W) FDN304P Typical Characteristics 5 ID = -2.4A 4 -15V 3 VDS = -5V -10V 2100 1800 CISS 1500 1200 900 600 f = 1MHz VGS = 0 V 2 1 300 COSS CRSS 0 0 2 4 6 8 10 12 14 0 0 5 10 15 20 Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) 10 10ms 1 1s VGS =-4.5V SINGLE PULSE RJA = 270 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 20 1ms SINGLE PULSE RJA = 270C/W TA = 25C 15 100ms 10s DC 10 0.1 5 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 270 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN304P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST (R) DISCLAIMER FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC (R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H7 |
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